AI in EE

AI IN DIVISIONS

AI in Device Division

AI in EE

AI IN DIVISIONS

AI in Device Division

AI in Device Division

최성율∙임성갑 교수 연구팀, 이차원 소재 기반 초저전력 비휘발성 유연메모리 개발

우리 학부 최성율 교수와 카이스트 생명화학공학과 임성갑 교수 공동 연구팀에서 이차원 비휘발성 메모리를 개발하여 해당 소식이 국내 유수의 언론에 보도되었습니다. 이차원 소재(MoS2)와 고분자 절연막을 이용하여 고집적, 초저전력 비휘발성 유연메모리를 개발하는 연구가 소개되었습니다. 
우명훈 석사(최성율 교수 연구실, 현 삼성전자 연구원)와 장병철 박사과정(최성율 교수 연구실)이 주도한 이번 연구는 국제 학술지 `Advanced Functional Matrials`에 2017년 11월 표지 논문으로 게재되었습니다. (Impact factor 2017: 12.12)
(논문명: Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric)

자세한 보도 내용은 아래의 링크를 참조해주시기 바랍니다.

언론보도: ‘KAIST, 실 엮어 저장·연산기능 구현… 신개념 웨어러블 구현’ (전자신문)
http://www.etnews.com/20180328000205

KAIST EE: ‘최양규 교수 연구실 배학열 학생과 최성율 교수 연구실 장병철 학생 공동 연구 Nano Letters 게재’
https://news.kaist.ac.kr/news/html/news/?mode=V&mng_no=2299&skey=&sval=%EC%B5%9C%EC%84%B1%EC%9C%A8&list_s_date=&list_e_date=&GotoPage=2

Article title: Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
A research article authored by Myung Hun Woo (KAIST EE), Byung Chul Jang (KAIST EE), Junhwan Choi (KAIST CBE), Khang June Lee (KAIST EE), Gwang Hyuk Shin (KAIST EE), Hyejeong Seong (KAIST CBE), Sung Gap Im (KAIST CBE), and Sung‐Yool Choi (KAIST EE; Corresponding author) was published at Advanced Functional Materials (2017.11)

Low-power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS2) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low-k tunneling on the dangling bond-free surface of MoS2 is a challenging task. Here, MoS2-based low-power nonvolatile charge storage memory devices are reported with a poly(1,3,5-trimethyl- 1,3,5-trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent-free initiated chemical vapor deposition (iCVD) process. The surface-growing polymerization and low-temperature nature of the iCVD process enable the conformal growing of low-k (≈2.2) pV3D3 insulating films on MoS2. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈106), excellent retention times of 105 s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 103 cycles, which are much higher than those reported previously for MoS2-based memory devices. By leveraging the inherent flexibility of both MoS2 and polymer dielectric films, this research presents an important milestone in the development of low-power flexible nonvolatile memory devices. 
 

 

Figure 1. A Schematic illustration of the fabricated memory device, which is composed of a pV3D3 tunneling dielectric, AuNPs as floating gate, and an Al2O3 blocking dielectric layer. B Cross-sectional TEM image of the device. C Initial transfer characteristics of the memory device with control gate voltage. The inset shows the memory device contact properties. D Transfer characteristics with VCG sweeping in the negative-to-positive direction and back, with fixed VDS = 1 V. E Extracted threshold voltage shift for different pulse widths, and calculated charge injection rate in program and erase operations.