AI in EE

AI IN DIVISIONS

AI in Device Division

AI in EE

AI IN DIVISIONS

AI in Device Division

AI in Device Division

최양규∙최성율 교수 연구팀, 섬유를 이용한 웨어러블 로직인메모리 개발

우리 학부 최양규∙최성율 교수 연구팀에서 멤리스터를 이용한 웨어러블 로직인메모리를 개발하여 국내 언론에 보도되었습니다. 전극과 절연막이 특수 코팅된 실을 직조해 멤리스터 소자 기반 로직인메모리를 구성하는 기술을 개발하는 연구가 소개되었습니다. 
배학열 박사과정(최양규 교수 연구실)과 장병철 박사과정(최성율 교수 연구실)이 주도한 이번 연구는 나노 분야 국제학술지 ‘나노 레터스(Nano Letters)’ 에 2017년 10월 논문으로 게재되었습니다. (Impact factor 2017: 12.080) 
(논문명: Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics)

자세한 보도 내용은 아래의 링크를 참조해주시기 바랍니다.

언론보도: ‘KAIST, 실 엮어 저장·연산기능 구현… 신개념 웨어러블 구현’ (전자신문)
http://www.etnews.com/20180328000205

KAIST EE: ‘최양규 교수 연구실 배학열 학생과 최성율 교수 연구실 장병철 학생 공동 연구 Nano Letters 게재’
ee.kaist.ac.kr/research-achieve/15451/

Article title: Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics

A research article authored by Hagyoul Bae (KAIST EE), Byung Chul Jang (KAIST EE), Hongkeun Park (KAIST CBE), Soo-Ho Jung (KIMS), Hye Moon Lee (KIMS), Jun-Young Park (KAIST EE), Seung-Bae Jeon (KAIST EE), Gyeongho Son (KAIST EE), Il-Woong Tcho (KAIST EE), Kyoungsik Yu (KAIST EE), Sung Gap Im (KAIST CBE), Sung-Yool Choi (KAIST EE; Corresponding author), and Yang-Kyu Choi (KAIST EE; Corresponding author) was published in Nano Letters (2017.10)

Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)-textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.