SubjectOxides for the Post-Silicon Thin Film Electronics Era
Date15:20 ~ 16:00, Monday, August 17, 2015
SpeakerProf. Arokia Nathan (Prof. of EE at Cambridge)
Place2F Wooribyul Seminar Room,EE (Dept.of Electrical Engineering), E3-2, KAIST
Oxide semiconductors are known for their optical transparency and high electron mobility even when processed at room temperature, making them a promising candidate for the next-generation thin film transistor (TFT) technology. This talk will discuss progress and issues related to oxide transistors for large area applications, and in particular, show how the material can be tuned for displays and imaging applications.
Professor Arokia Nathan holds the Chair of Photonic Systems and Displays in the Department of Engineering, Cambridge University. He received his PhD in Electrical Engineering from the University of Alberta. Following post-doctoral years at LSI Logic Corp., USA and ETH Zurich, Switzerland, he joined the University of Waterloo where he held the DALSA/NSERC Industrial Research Chair in sensor technology and subsequently the Canada Research Chair in nano-scale flexible circuits. He was a recipient of the 2001 NSERC E.W.R. Steacie Fellowship. In 2006, he moved to the UK to take up the Sumitomo Chair of Nanotechnology at the London Centre for Nanotechnology, University College London, where he received the Royal Society Wolfson Research Merit Award. He has held Visiting Professor appointments at the Physical Electronics Laboratory, ETH Zürich and the Engineering Department, Cambridge University, UK. He has published over 400 papers in the field of sensor technology and CAD, and thin film transistor electronics, and is a co-author of four books. He has over 50 patents filed/awarded and has founded/co-founded four spin-off companies. He serves on technical committees and editorial boards in various capacities. He is a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE (USA), and an IEEE/EDS Distinguished Lecturer.