Professor SeongHwan Cho’s research group has been selected for the second half of 2025 Samsung Future Technology Development Program with the project titled “Ultra-Wideband Memory IC Technology for Ultra-Large AI Models.”
The study aims to achieve a fundamental innovation in next-generation AI memory systems capable of meeting the exponentially growing demands of AI models.
Although the computational performance of AI processors has improved dramatically in recent years, the development of memory bandwidth still lags far behind. Despite the advent of High Bandwidth Memory (HBM), this gap has continued to widen, acting as a major performance bottleneck for entire AI systems.
To overcome these limitations, the research team will focus on two key areas: ultra-high-density inter-chip connection technology and ultra-high-speed communication circuit technology. Based on the proposed ultra-wideband memory interface, they plan to introduce a new AI memory hierarchy and design its operation and detailed structure to verify the overall performance of AI semiconductor systems.
The ultra-wideband memory technology developed through this research is expected to become a core technology for next-generation memory systems designed for ultra-large AI models and to expand the application market of DRAM.
