김상현 (2019.2 부임예정) Kim, Sanghyeon

학위

Ph.D.(2014) Univ. of Tokyo

대표업적

  • S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, "High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator Tri-gate MOSFETs with high short channel effect immunity and Vth tunability", International Electron Devices Meeting (IEDM), p. 429 (2013)
  • D. -M. Geum, M.-S. Park, J. -Y. Lim, H. -D. Yang, J. D. Song, C. -Z. Kim, E. Yoon, S. -H. Kim*, and W. J. Choi, "Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications", Scientific reports 6, 20610 (2016)
  • S. -K. Kim, J. -P. Shim, D. -M. Geum, C. Z. Kim, H. -S. Kim, Y. -S. Kim, H. -K. Kang, J. D. Song, S. -J. Choi, D. H. Kim, W. J. Choi, H. -J. Kim, D. M. Kim*, and S. -H. Kim*, "Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use", International Electron Devices Meeting (IEDM), p. 616 (2016)
  • S. -H. Kim*, S. -K. Kim, J. -P. Shim, D. -M. Geum, G. Ju, H. -S. Kim, H. -J. Lim, H. -R. Lim, J. -H. Han, S. Lee, H. -S. Kim, P. Bidenko, C. -M. Kang, D. -S. Lee, J. -D. Song, W. J. Choi, and H. -J. Kim, "Heterogeneous Integration toward Monolithic 3D Chip enabled by III-V and Ge Materials", IEEE Journal of the Electron Device Society 6, p. 579 (2018)
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