최성율∙임성갑 교수팀이 이차원 비휘발성 메모리를 개발하여 2017년 12월 18일 연합뉴스(및 17개 언론)에 보도되었습니다. 이번 연구에서는 이차원 소재(MoS2)와 고분자 절연막을 이용하여 고집적, 초저전력 비휘발성 유연메모리를 개발하였습니다. 이번 연구는 국제 학술지 `Advanced Functional Matrials`에 2017년 11월 표지 논문으로 게재되었습니다. (Impact factor 2017 : 12.12)
<언론보도>‘KAIST, 초저전력 메모리 개발, 유연성도 갖춰’ (연합뉴스 및 17개 언론사)
KAIST News: ‘최성율 교수, 이차원 소재 이용한 초저전력 유연메모리 개발’
Article title: Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics
A research article authored by Hagyoul Bae (KAIST EE), Byung Chul Jang (KAIST EE), Hongkeun Park (KAIST CBE), Soo-Ho Jung (KIMS), Hye Moon Lee (KIMS), Jun-Young Park (KAIST EE), Seung-Bae Jeon (KAIST EE), Gyeongho Son (KAIST EE), Il-Woong Tcho (KAIST EE), Kyoungsik Yu (KAIST EE), Sung Gap Im (KAIST CBE), Sung-Yool Choi (KAIST EE; Corresponding author), and Yang-Kyu Choi (KAIST EE; Corresponding author) was published in Nano Letters (2017.10)
Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)-textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.
Figure 1. A Schematic illustration of the fabricated memory device, which is composed of a pV3D3 tunneling dielectric, AuNPs as floating gate, and an Al2O3 blocking dielectric layer. B Cross-sectional TEM image of the device. C Initial transfer characteristics of the memory device with control gate voltage. The inset shows the memory device contact properties. D Transfer characteristics with VCG sweeping in the negative-to-positive direction and back, with fixed VDS = 1 V. E Extracted threshold voltage shift for different pulse widths, and calculated charge injection rate in program and erase operations.