김용훈

Kim, Yong-Hoon

연구디비젼

Device

division

주요 연구분야

Integrated Circuits & Semiconductor Systems, Quantum Science & Engineering, Semiconductor Devices & Nanotechnology, Photonics

주요 연구

Atomic-scale device simulations; High-performance/Machine-learning scientific computing; Nanoelectronic/Quantum devices

소속연구실

원자 수준 소자 시뮬레이션 연구실

위치

전기및전자공학부동 (E3-2)

6209

연락처

7423

이메일

y.h.kim@kaist.ac.kr

웹사이트

http://nanocore.kaist.ac.kr/

학위

Ph.D. in Theoretical Condensed Matter Physics (2000) University of Illinois at Urbana-Champaign (UIUC)

대표업적

J. Lee, H. Yeo, and Y.-H. Kim, “Quasi-Fermi level splitting in nanoscale junctions from ab initio”, Proc. Natl. Acad. Sci. U. S. A. 117, 10142 (2020).
J. Lee, H. S. Kim, and Y.-H. Kim, “Multi-space excitation as an alternative to the Landauer picture for non-equilibrium quantum transport”, Adv. Sci. 7, 2001038 (2020).
T. H. Kim, J. Lee, R. G. Lee, and Y.-H. Kim, “Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures”, npj Comput. Mater. 8, 50 (2022).
M. E. Khan, J. Lee, S. Byeon, and Y.-H. Kim*, “Semimetallicity and negative differential resistance from hybrid halide perovskite nanowires”,, Adv. Funct. Mater. 29, 1807620 (2019).
T. Kang, et al., “High‐κ dielectric (HfO2)/2D semiconductor (HfSe2) gate stack for low‐power steep‐switching computing devices”,, Adv. Mater. 36, 2312747 (2024).