Dr. In Kim acquired BS (’89), MS (’91), and Ph.D (’96) degrees in Physics all from Seoul National University, and then he worked as a postdoc in the Electrical Engineering Department of University of Southern California. Throughout his Ph.D and postdoc, he studied the MOCVD growth of various compound semiconductors such as InAlGaAs, InGaAsP, and InGaN, and their application to photonic devices such as lasers, amplifiers, and resonant cavity couplers. He joined Samsung Electronics in 1999, as a starting member of Opto-electronics Business Division for telecommunication component production, where he developed the amplifier- and modulator-integrated laser for the first time. He moved to Digital Media Communication R&D Center in 2003 to develop laser diodes for FTTH and optical interconnection applications.

In 2009, he joined the manufacturing team of Samsung LED, where he had been leading the MOCVD production line until 2015. His MOCVD line managed to equalize the device performance from more-than-100 MOCVD reactors by high-level tool-to-tool matching. It was a unique approach never tried in the LED industry and was only possible by deep understanding of MOCVD process and LED device physics. Then he moved to the LED development team and worked in the GaN-on-Si growth project. Since July 2017, he is the Chip Team Director of OE Solutions in Gwangju, the leading telecommunication components manufacturer in Korea. Now, he is leading the development of 25Gb/s lasers for 5G wireless network application.