Our department’s Professor Yong-Hoon Kim’s research team has finally calculated the 1st principle Quasi-Fermi level splitting in 70 years and has been reported in numerous presses.
1st principle calculations are based on only quantum mechanical simulations and do not use experimental data or models with pre-existing data. The team used a new theoratical model and a super computer to find the origin of the voltage drop inside nanostructures under a non-equilibrium state. By these results, it will enable a better understanding of the theoretical system for designing and analyzing state of the art and next generation semidonductor nano devices.
The result which Ph.D candidate Juho Lee contributed as 1st author was published in the online version of ‘Proceedings of the National Academy of Sciences’ posted on April 23rd. (Article : Quasi-Fermi level splitting in nanoscale junctions from ab initio)
The research team was the first to configure the complicated voltage drop phenomenon which occurs in the nanoscale regime by analyzing a single molecule device, a promising candidate for next generation semiconductor devices. The team showed that the nonlinear voltage drop in highly conductive nano electronic devices comes from the Quasi-Fermi level splitting. It was accomplished by years of effort of founding the 1st principle calculation theory and computer based simulations. It means great achievement in the semiconductor development field by obtaining the key development tools and technologies which previously were heavily reliant on foreign softwares.
This research was funded by the Ministry of Science and Technologies Mid-Career Research Program, Nanomaterial Developement Program, Basic Research Developing Program, and the Global Frontier Research Program.
The press reports can be found in the following links.