EE Professor Sanghyeon Kim’s lab has been selected for one of five new ICT projects for the first half of this year by the Samsung Research Funding & Incubation Center for Future Technology.
The Samsung Research Funding & Incubation Center for Future Technology is a funding initiative that supports innovative research projects across a wide range of fields, from natural sciences to engineering, with the aim of advancing science, technology, and industry in Korea.
Professor Kim’s lab will carry out a project titled “Low-Loss Active Power Delivery Network with Embedded On-Chip Voltage Regulator for Ultra-Low Power Computing” The research team plans to explore a solution to the power delivery problem, which has recently emerged as a key issue in the fields of semiconductor chips and packaging. Specifically, they will investigate a method of delivering power at high voltage and stepping it down on the backside of the chip.
The goal is to implement an on-chip voltage regulator using GaN-based switches, which have excellent material potential, and ferroelectric capacitors. Ultimately, the core idea is to integrate this system as an active component of the backside power delivery network (BSPDN).
Meanwhile, the foundational concept of this project was presented by the research team at IEDM — one of the three major conferences in the semiconductor field—in December last year, and improved technologies will be presented at the upcoming VLSI Symposium in June.
