신민철

Shin, Mincheol

연구디비젼

Device

division

주요 연구분야

Integrated Circuits & Semiconductor Systems, Semiconductor Devices & Nanotechnology

주요 연구

Computational Nanotechnology, Nano Device Simulation

소속연구실

계산나노기술공학 연구실

위치

전기및전자공학부동 (E3-2)

서 6204 호

연락처

7418

이메일

mshin@kaist.ac.kr

웹사이트

http://cnl.kaist.ac.kr

학위

Ph.D.(1992) Northwestern Univ. U.S.A.

대표업적

M. Shin, “Multi-gate nanowire FET”, Simulation tool on nanoHUB, DOI:10254/nanohub-r2704, May 2008. http://www.nanohub.org/tools/mgnanowirefet(Accumlated users:340, Jobs:7696)
M. Shin, “Quantum simulations of ballistic nanowire field effect transistors”, Encyclopedia of Complexity and Systems Science in Meyers, Robert(ED), Springer New York, June 2009(Invited Article)
M. Shin, S. Lee and G. Klimeck, “Computational study on the performance of Si nanowire pMOSFETs based on the k.p method”, IEEE Tr. Electron Devices, vol. 57. no. 9, pp. 2274-2283, Sep. 2010.
M. Shin, Y. Park. K.-J. Kong, and H. Chang, “Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations”, Appl. Phys. Lett., vol. 98, no. 17, pp. 173501-173501-3, Apr. 2011.
Jaehyun Lee and Mincheol Shin, “Simulation Study of Germanium p-type Nanowire Schottky Barrier MOSFETs”, IEEE Electron Device Letters, vol. 34, no. 3, pp. 342-344, March, 2013.