For the past several decades, III-V transistors have been a cornerstone for the revolution of high-frequency electronics. Among them, High-Electron-Mobility-Transistors (HEMTs) have shown impressive success in multiple different applications, including ultra-high-frequency analog ICs, switch ICs implanted in the cell-phone and low-noise-amplifiers (LNAs). They started with GaAs material system, then recently with various materials such as InGaAs and GaN. In my presentation, I will talk about recent progress of InGaAs HEMTs for THz applications. In addition, I will provide a pathway to further improve their high-frequency characteristics of InGaAs heterostructure-FETs (HFETs). Finally, I will briefly talk about recent accomplishments on InGaAs MOSFET technology that my group at Kyungpook National University has made recently.
Dae-Hyun Kim was born in Korea on November 13, 1974. He received the B.S. degree in Electronics from Kyungpook National University in 1997, the M.S. degree in Electrical Engineering from Seoul National University in 2000, and Ph.D degree in Electrical Engineering and Computer Science from Seoul National University in 2004. From 2004 to 2005, he was a Post-doc associate at Inter-university Semiconductor Research Center (ISRC) at Seoul National University. From 2005 to 2008, he was with MIT as a Post-doc associate at Microsystems Technology Laboratory (MTL). In 2008, he joined in Teledyne Scientific Company (TSC) as a member of technical staff. In 2012, he joined in SEMATECH as a manager, in charge of heterogeneous integration of III-Vs onto Si and InGaAs MOSFET development. In 2015, he joined in Kyungpook National University, Daegu, South Korea and is currently an associated professor in School of Electronics Engineering. Since 2014, he has served as an editor at IEEE Electron Device Letter (EDL), and serves as a TPC member at prestigious conferences, including IEDM.