Heterostructures composed of dissimilar materials have generated great interest because of the unique functionalities that cannot be offered by homogeneous structures owing to their unique properties. Interfacing mixed-dimensional materials, with band alignment strongly influenced by the unique nature of each material system, enables drastic changes in the electrical, magnetic, optical, and thermal properties beyond its individual counterpart. Thus, appropriate selection of dissimilar materials can allow significant modification of their physical structures resulting in intriguing properties and unprecedented device architectures. Here, I will introduce unique techniques to produce single crystalline thin-film semiconductors via epitaxy and exfoliation from graphene-coated crystalline substrates, termed remote epitaxy and 2-dimensional layer based transfer process. This technology enables heterogeneous integration of various materials on a single platform. Furthermore, I will present promising applications of hetero-integration for light detection and ranging by integrating GaN-based HEMT and GaAs VCSEL. Furthermore, integration of sensors with AI hardware platform for edge computing applications will be discussed.