The talk will describe how HfO2 has replaced SiO2 as the gate oxide in CMOS FETs, how metal gates replaced doped poly Si as the gate electrode, and how high mobility semiconductors are starting to replace Si as the channel material. This requires a deep understanding of the materials.
Professor John Robertson is a Professor of Electronic Engineering at Cambridge University, UK. He is a Fellow of the IEEE, the American Physical Society and of the Materials Research Society. He received his BA degree in Natural Science from Cambridge University and his PhD in Physics from Cambridge University. After working in industry for 18 years, he joined the Engineering Department of Cambridge University in 1994.
He has published about 600 journal papers, with over 33,000 citations and is an ISI highly cited author in Materials Science. His research interests are in electronic materials in general, such materials for the CMOS gate stack, high dielectric constant oxides, thin film transistors including amorphous semiconducting oxides, carbon nanotubes, graphene, diamond-like carbon and CVD processes.
He is an Associate Editor of Journal of Applied Physics, and has been on the Editorial Board of Physical Review Letters