AI in EE

AI IN DIVISIONS

AI in Device Division

AI in EE

AI IN DIVISIONS

AI in Device Division

AI in Device Division

Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection

Prof. Sanghyeon Kim’s paper on the multi-color photodetector, which can be used as a compact photonic sensor for AI chip was presented in VLSI symposia 2019*.

*VLSI symposia is the one of flagship conference in VLSI society.

Title: Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection

Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD was successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.

 

 

Figure 1. Multi-Color Photodetector

Copyright ⓒ 2015 KAIST Electrical Engineering. All rights reserved. Made by PRESSCAT

Copyright ⓒ 2015 KAIST Electrical Engineering. All rights reserved. Made by PRESSCAT

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Copyright ⓒ 2015 KAIST Electrical
Engineering. All rights reserved.
Made by PRESSCAT