A joint research conducted by Professor Choi Sung-Yool of our department, and Professor Im Sung-Gap of Dept. of Chemical and Biomolecular Engineering was published as a Front cover paper on Nov. 17 in Advanced Functional Materials.
The title of this paper is ‘Low-Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric’, and the author is M.S graduate Woo Myung Hoon (1st co-author, now Samsung Electronics), Ph.D candidate Jang Byoung Chul (1st co-author), Ph.D candidate Choi Joon-hwan, Professor Im Sung-Gap (co-author), and Professor Choi Sung-Yool (correspondent author).
Jorunal : Advanced Functional Materials
Title : Low-Power Nonvolatile Charge Storage Memory based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
Author : M.S graudate Woo Myung Hoon (1st co-author), Ph.D candidate Jang Byoung Chul (1st co-author), Professor Choi Sung-Yool (correspondent author)
Link : http://onlinelibrary.wiley.com/doi/10.1002/adfm.201703545/full
